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Transistors

Publication date: February 2004 SJC00136CED

2SC3757

Silicon NPN epitaxial planar type

For high-speed switching

■ Features

• Low collector-emitter saturation voltage V

CE(sat)

• Mini type package, allowing downsizing of the equipment and au-

tomatic insertion through the tape packing and the magazine

packing

■ Absolute Maximum Ratings T

= 25°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base cutoff current (Emitter open)

CBO

= 15 V, I

= 0 0.1 µA

Emitter-base cutoff current (Collector open)

EBO

= 4 V, I

= 0 0.1 µA

Forward current transfer ratio

= 1 V, I

= 10 mA 60 200 

Collector-emitter saturation voltage V

CE(sat)

= 10 mA, I

= 1 mA 0.17 0.25 V

Base-emitter saturation voltage V

BE(sat)

= 10 mA, I

= 1 mA 1.0 V

Transition frequency f

= 10 V, I

= −10 mA, f = 200 MHz 450 MHz

Collector output capacitance C

= 10 V, I

= 0, f = 1 MHz 2 6 pF

(Common base, input open circuited)

Turn-on time t

Refer to the switching time measurement

17 ns

Turn-off time t

off

circuit 17 ns

Storage time t

stg

10 ns

■ Electrical Characteristics T

= 25°C ± 3°C

Unit: mm

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

CBO

40 V

Collector-emitter voltage (E-B short) V

CES

40 V

Emitter-base voltage (Collector open) V

EBO

Collector current I

100 mA

Peak collector current I

300 mA

Collector power dissipation P

200 mW

Junction temperature T

150 °C

Storage temperature T

stg

−55 to +150 °C

Marking Symbol: 2Y

0.40

+0.10

–0.05

(0.65)

1.50

+0.25

–0.05

2.8

+0.2

–0.3

(0.95) (0.95)

1.9

±0.1

2.90

+0.20

–0.05

0.16

+0.10

–0.06

0.4

±0.2

5˚

10˚

0 to 0.1

1.1

+0.2

–0.1

1.1

+0.3

–0.1

1: Base

2: Emitter

3: Collector

EIAJ: SC-59

Mini3-G1 Package

Rank Q R

60 to 120 90 to 200

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

: Rank classification

This product complies with the RoHS Directive (EU 2002/95/EC).

1 2 3

Indice de contenidos

Pagina 1 - Transistors

Transistors1Publication date: February 2004 SJC00136CED2SC3757Silicon NPN epitaxial planar typeFor high-speed switching Features• Low collector-emitt

Pagina 2 - test circuit

2SC37572SJC00136CEDhFE  ICfT  IECob  VCBIC  VCEVCE(sat)  ICVBE(sat)  IC220 Ω0.1 µF50 ΩVCC = 3 VVOUT3.3 kΩ50 ΩVIN = 10 V3.3 kΩVBB = −3 VVINVOUTto

Pagina 3

Request for your special attention and precautions in using the technical information andsemiconductors described in this book(1)If any of the produc

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