Panasonic 2SC6037G Manual de usuario

Busca en linea o descarga Manual de usuario para Hardware Panasonic 2SC6037G. Panasonic 2SC6037G User Manual Manual de usuario

  • Descarga
  • Añadir a mis manuales
  • Imprimir
  • Pagina
    / 4
  • Tabla de contenidos
  • MARCADORES
  • Valorado. / 5. Basado en revisión del cliente
Vista de pagina 0
Transistors
1
Publication date: May 2007 SJC00383AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA2161G
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC6037G
Features
Low collector-emitter saturation voltage V
CE(sat)
SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
15 V
Collector-emitter voltage (Base open) V
CEO
12 V
Emitter-base voltage (Collector open) V
EBO
5V
Collector current I
C
500 mA
Peak collector current I
CP
1A
Collector power dissipation P
C
125 mW
Junction temperature T
j
125 °C
Storage temperature T
stg
55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 10 µA, I
E
= 0 15 V
Collector-emitter voltage (Base open) V
CEO
I
C
= 1 mA, I
B
= 0 12 V
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 µA, I
C
= 0 5V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 15 V, I
E
= 0 0.1 µA
Forward current transfer ratio h
FE
V
CE
= 2 V, I
C
= 10 mA 270 680
Collector-emitter saturation voltage V
CE(sat)
I
C
= 200 mA, I
B
= 10 mA 250 mV
Transition frequency f
T
V
CB
= 2 V, I
E
= 10 mA, f = 200 MHz 200 MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 4.5 pF
(Common base, input open circuited)
Electrical Characteristics T
a
= 25°C ± 3°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Package
Code
SSMini3-F3
Marking Symbol: 2U
Pin Name
1. Base
2. Emitter
3. Collector
Vista de pagina 0
1 2 3 4

Indice de contenidos

Pagina 1 - 2SA2161G

Transistors1Publication date: May 2007 SJC00383AEDThis product complies with the RoHS Directive (EU 2002/95/EC).2SA2161GSilicon PNP epitaxial planar t

Pagina 2

2SA2161G2SJC00383AEDThis product complies with the RoHS Directive (EU 2002/95/EC).VCE(sat)  IChFE  ICCob  VCBPC  TaIC  VCEIC  VBE020406080100120

Pagina 3 - SSMini3-F3 Unit: mm

This product complies with the RoHS Directive (EU 2002/95/EC).SSMini3-F3 Unit: mm1.00 ±0.05(0.50) (0.50)1.60+0.05−0.030.26+0.05−0.021230.85+0.05−0

Pagina 4

Request for your special attention and precautions in using the technical information andsemiconductors described in this book(1)If any of the produc

Modelos relacionados 2SA2161G

Comentarios a estos manuales

Sin comentarios