Panasonic UP05C8PG Manual de usuario

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Multi Chip Discrete
Publication date: March 2008 SJJ00401AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
UP05C8PG
Silicon NPN epitaxial planar type (Tr)
Silicon epitaxial planar type (CCD load device)
For CCD output circuits
Features
Two elements incorporated into one package (Tr + CCD load device)
Costs can be reduced through downsizing of the equipment and reduction of
the number of parts.
Basic Part Number
2SC3932G + CCD load device
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Tr
Collector-base voltage
(Emitter open)
V
CBO
30 V
Collector-emitter voltage
(Base open)
V
CEO
20 V
Emitter-base voltage
(Collector open)
V
EBO
3 V
Collector current I
C
50 mA
CCD
load
device
Limiting element voltage V
max
40 V
Limiting element current I
max
10 mA
Overall
Total power dissipation
*
P
T
125 mW
Junction temperature T
j
125
°C
Storage temperature T
stg
–55 to +125
°C
Note)
*
: Measuring on substrate at 17 mm × 10 mm × 1 mm
Package
Code
SSMini6-F2
Pin Name
1: Emitter 4: Source
2: Base 5: Drain
3: Gate 6: Collector
Marking Symbol: 4X
Internal Connection
3
(G)
(S)
4
1
(E)
2
(B)
(C)
6
(D)
5
Tr
FET
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Indice de contenidos

Pagina 1 - UP05C8PG

Multi Chip Discrete Publication date: March 2008 SJJ00401AED 1 This product complies with the RoHS Directive (EU 2002/95/EC).UP05C8PGSilicon NPN ep

Pagina 2

UP05C8PG 2 SJJ00401AED This product complies with the RoHS Directive (EU 2002/95/EC). Electrical Characteristics Ta = 25°C±3°C TrParameter Symbo

Pagina 3 - UP05C8PG

UP05C8PG SJJ00401AED 3 This product complies with the RoHS Directive (EU 2002/95/EC). VCE(sat)  IC hFE  IC0.1 1 101000.110.01UP05C8PG_VCE(sat)

Pagina 4 - SSMini6-F2 Unit: mm

UP05C8PG 4 SJJ00401AED This product complies with the RoHS Directive (EU 2002/95/EC).SSMini6-F2 Unit: mm1.60 ±0.050.20+0.05−0.026 5 41 2 31.60 ±0.0

Pagina 5

Request for your special attention and precautions in using the technical information andsemiconductors described in this book(1)If any of the produc

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