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Transistors

Publication date: April 2003 SJC00226BED

2SD1819A

Silicon NPN epitaxial planar type

For general amplification

Complementary to 2SB1218A

■ Features

• High forward current transfer ratio h

• Low collector-emitter saturation voltage V

CE(sat)

• S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape pacing and the magazine

pacing.

■ Absolute Maximum Ratings T

= 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

CBO

60 V

Collector-emitter voltage (Base open) V

CEO

50 V

Emitter-base voltage (Collector open) V

EBO

Collector current I

100 mA

Peak collector current I

200 mA

Collector power dissipation P

150 mW

Junction temperature T

150 °C

Storage temperature T

stg

−55 to +150 °C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

CBO

= 10 µA, I

= 060V

Collector-emitter voltage (Base open) V

CEO

= 2 mA, I

= 050V

Emitter-base voltage (Collector open) V

EBO

= 10 µA, I

= 07V

Collector-base cutoff current (Emitter open)

CBO

= 20 V, I

= 0 0.1 µA

Collector-emitter cutoff current (Base open)

CEO

= 10 V, I

= 0 100 µA

Forward current transfer ratio h

FE1

= 10 V, I

= 2 mA 160 460 

FE2

= 2 V, I

= 100 mA 90

Collector-emitter saturation voltage V

CE(sat)

= 100 mA, I

= 10 mA 0.1 0.3 V

Transition frequency f

= 10 V, I

= −2 mA, f = 200 MHz 150 MHz

Collector output capacitance C

= 10 V, I

= 0, f = 1 MHz 3.5 pF

(Common base, input open circuited)

■ Electrical Characteristics T

= 25°C ± 3°C

Unit: mm

2.1

±0.1

1.3

±0.1

0.3

+0.1

–0.0

2.0

±0.2

1.25

±0.10

(0.425)

(0.65)

0.2

±0.1

0.9

±0.1

0 to 0.1

0.9

+0.2

–0.1

0.15

+0.10

–0.05

5˚

10˚

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

: Rank classification

Rank Q R S No rank

FE1

160 to 260 210 to 340 290 to 460 160 to 460

Marking symbol ZQ ZR ZS Z

Product of no-rank is not classified and have no marking symbol for rank.

Marking Symbol: Z

1: Base

2: Emitter

3: Collector

EIAJ: SC-70

SMini3-G1 Package

This product complies with the RoHS Directive (EU 2002/95/EC).

1 2 3

2SD1819A 1

Indice de contenidos

Pagina 1 - 2SD1819A

Transistors1Publication date: April 2003 SJC00226BED2SD1819ASilicon NPN epitaxial planar typeFor general amplificationComplementary to 2SB1218A Featu

Pagina 2

2SD1819A2SJC00226BEDIC  VBEIC  IBVCE(sat)  ICPC  TaIC  VCEIB  VBEhFE  ICfT  IE0 16040 1208002001601208040Collector power dissipation PC (mW)

Pagina 3

Request for your special attention and precautions in using the technical information andsemiconductors described in this book(1)If any of the produc

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Panasonic 2SD1819A Manual de usuario

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