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Panasonic 2SC5950 Manual de usuario

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Transistors
Publication date: May 2005 SJC00333AED
1
2SC5950
Silicon NPN epitaxial planar type
For general amplifi cation
Complementary to 2SA2122
Features
High forward current transfer ratio h
High forward current transfer ratio h
FE
High forward current transfer ratio h
FE
High forward current transfer ratio h
Smini typ package, allowing downsizing of the equipment and　automatic
Smini typ package, allowing downsizing of the equipment and　automatic
insertion through the tape packing
Absolute Maximum Ratings
Absolute Maximum Ratings
T
a
= 25
a
= 25
a
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
60
V
Collector-emitter voltage (Base open)
V
CEO
50
V
Emitter-base voltage (Collector open)
V
EBO
7
V
Collector current
I
C
100
mA
Peak collector current
I
CP
200
mA
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
T
j
T
150
°
C
Storage temperature
T
stg
T
stg
T
−
55 to
+
150
°
C
Electrical Characteristics
Electrical Characteristics
T
a
= 25
a
= 25
a
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 10
µ
A, I
E
= 0
E
= 0
E
60
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= 2 mA, I
B
= 0
50
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= 10
E
= 10
E
µ
A, I
C
= 0
7
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 20 V, I
E
= 0
E
= 0
E
0.1
µ
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= 10 V, I
CE
= 10 V, I
CE
B
= 0
100
µ
A
Forward current transfer ratio
h
FE
h
FE
h
V
CE
= 10 V, I
CE
= 10 V, I
CE
C
= 2 mA
160
460
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 100 mA, I
B
= 10 mA
0.1
0.3
V
Transition frequency
f
T
f
T
f
V
CB
= 10 V, I
E
=
E
=
E
−
2 mA, f = 200 MHz
100
MHz
Collector output capacitance
(Common base, input open circuited)
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
E
= 0, f = 1 MHz
E
2.2
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Unit: mm
1: Base
2: Emitter
3: Collector SMini3-G1 Package
2.1±0.1
1.3±0.1
0.3
+0.1
–0.0
2.0±0.2
1.25±0.10 (0.425)
1
3
2
(0.65)
(0.65)
0.2±0.1
0.9±0.10 to 0.1
0.9
+0.2
–0.1
0.15
+0.10
–0.05
5°
10°
Marking Symbol: 7M
This product complies with the RoHS Directive (EU 2002/95/EC).
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Indice de contenidos

Pagina 1 - Transistors

Transistors Publication date: May 2005 SJC00333AED 12SC5950Silicon NPN epitaxial planar typeFor general amplifi cationComplementary to 2SA2122 Featur

Pagina 2

Request for your special attention and precautions in using the technical information andsemiconductors described in this book(1)If any of the produc

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