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Transistors

Publication date: April 2007 SJC00349AED

This product complies with the RoHS Directive (EU 2002/95/EC).

2SA2009G

Silicon PNP epitaxial planar type

For low-frequency high breakdown voltage amplification

■ Features

• High collector-emitter voltage (Base open) V

CEO

• Low noise voltage NV

•

S-Mini type package, allowing downsizing and thinning of the

equipment and automatic insertion through the tape packing.

■ Absolute Maximum Ratings T

= 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

CBO

−120 V

Collector-emitter voltage (Base open) V

CEO

−120 V

Emitter-base voltage (Collector open) V

EBO

−5V

Collector current I

−20 mA

Peak collector current I

−50 mA

Collector power dissipation P

150 mW

Junction temperature T

150 °C

Storage temperature T

stg

−55 to +150 °C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

CBO

= −10 µA, I

= 0 −120 V

Collector-emitter voltage (Base open) V

CEO

= −1 mA, I

= 0 −120 V

Emitter-base voltage (Collector open) V

EBO

= −10 µA, I

= 0 −5V

Collector-base cutoff current (Emitter open)

CBO

= −50 V, I

= 0 −100 nA

Collector-emitter cutoff current (Base open)

CEO

= −50 V, I

= 0 −1 µA

Forward current transfer ratio

= −5 V, I

= −2 mA 180 700 

Collector-emitter saturation voltage V

CE(sat)

= −20 mA, I

= −2 mA − 0.6 V

Transition frequency f

= −5 V, I

= 2 mA, f = 200 MHz 200 MHz

Noise voltage NV V

= −40 V, I

= −1 mA, G

= 80 dB 130 mV

= 100 kΩ, Function = FLAT

■ Electrical Characteristics T

= 25°C ± 3°C

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

: Rank classification

Rank R S T

180 to 360 260 to 520 360 to 700

■ Package

• Code

SMini3-F2

• Marking Symbol: AR

• Pin Name

1. Base

2. Emitter

3. Collector

1 2 3 4

2SA2009G 1
SMini3-F2 Unit: mm 3

Indice de contenidos

Pagina 1 - 2SA2009G

Transistors1Publication date: April 2007 SJC00349AEDThis product complies with the RoHS Directive (EU 2002/95/EC).2SA2009GSilicon PNP epitaxial planar

Pagina 2

2SA2009G2SJC00349AEDThis product complies with the RoHS Directive (EU 2002/95/EC).VCE(sat)  IChFE  ICCob  VCBPC  TaIC  VCEIC  VBE016040 12080020

Pagina 3 - SMini3-F2 Unit: mm

This product complies with the RoHS Directive (EU 2002/95/EC).SMini3-F2 Unit: mm0.30+0.05−0.020.13+0.05−0.022.00 ±0.20(0.89)0.90 ±0.10(0.65)(0.65)

Pagina 4

Request for your special attention and precautions in using the technical information andsemiconductors described in this book(1)If any of the produc

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